onsemi 2SC3648T-TD-E BJTs - Bipolar Transistors BIP NPN 0.7A 160V
Manufactureronsemi(View more products from this manufacturer)
Model2SC3648T-TD-E
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Technology: Si
Unit Weight: 51 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 700 mA
Maximum DC Collector Current: 700 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 120 mV
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