onsemi 2SC3646S-TD-E BJTs - Bipolar Transistors BIP NPN 1A 100V
Manufactureronsemi(View more products from this manufacturer)
Model2SC3646S-TD-E
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 51.380 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 280
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 140
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 100 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts