onsemi 2SB1302S-TD-E BJTs - Bipolar Transistors BIP PNP 5A 20V
Manufactureronsemi(View more products from this manufacturer)
Model2SB1302S-TD-E
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Technology: Si
Unit Weight: 51.670 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.3 W
DC Current Gain hFE Max: 280
Gain Bandwidth Product fT: 320 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 25 V
Continuous Collector Current: - 5 A
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 140
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 250 mV
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