onsemi 2SB1215S-H BJTs - Bipolar Transistors BIP PNP 3A 100V
Manufactureronsemi(View more products from this manufacturer)
Model2SB1215S-H
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Technology: Si
Unit Weight: 4 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 130 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 200 mV
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