onsemi 2SA2016-TD-E BJTs - Bipolar Transistors BIP PNP 7A 50V
Manufactureronsemi(View more products from this manufacturer)
Model2SA2016-TD-E
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 130.500 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 3.5 W
Gain Bandwidth Product fT: 330 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 7 A
Maximum DC Collector Current: 7 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 240 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts