onsemi 2SA2013-TD-E BJTs - Bipolar Transistors BIP PNP 4A 50V
Manufactureronsemi(View more products from this manufacturer)
Model2SA2013-TD-E
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Technology: Si
Unit Weight: 51.500 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 3.5 W
DC Current Gain hFE Max: 560
Gain Bandwidth Product fT: 360 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 4 A
Maximum DC Collector Current: 7 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 200 mV
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