onsemi 2SA1705S-AN BJTs - Bipolar Transistors BIP PNP 1A 50V

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 900 mW

DC Current Gain hFE Max: 400 at - 100 mA, - 2 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 140

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 180 mV