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onsemi 2N5038G BJTs - Bipolar Transistors 20A 90V 140W NPN

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Width: 26.67 mm

Height: 8.51 mm

Length: 39.37 mm

Technology: Si

Unit Weight: 180 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 140 W

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 20 A

Maximum DC Collector Current: 20 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 90 V

Collector-Emitter Saturation Voltage: 2.5 V

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