Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Mounting: Metric screw in
Band Type: Band B
Wire Length: 19.304 mm
Sensor Width: 6.096 mm
Output Signal: Voltage
Repeatability: ± 10 mK @ 4.2 K
Sensor Height: 5.556 mm
Wire Diameter: 0.38 mm
Sensor Threads: N/A
Number of Wires: 2
Reverse Voltage: 60 V
Current, Max Note: 1 mA, continuous or 100 mA, pulsed
Supply Power Effects: 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K
Thermal Response Time: SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K
Use in Radiation Note: Recommended for use only in low level radiation
Recommended Excitation: 10 µA, ± 0.1%
Temperature Sensor Type: Silicon Diode
Process Temperature, Max: 226.85 °C
Process Temperature, Min: -271.8 °C
Accuracy Band Availability: 1, 2, 3, 4
Use in Magnetic Field Note: Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K