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NXP PMG370XN,115 Power MOSFET

ModelPMG370XN,115
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Type: Power MOSFET

Vgs(th): 1.5 V

Vgs (Max): 12V

Gate Charge (Qg): 0.65nC

Power consumption: 690mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 960mA

Input Capacitance (Ciss): 37pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 440mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V

Datasheet


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