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NXP PHX45NQ11T,127 MOSFET

ModelPHX45NQ11T,127
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Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 61nC

Power consumption: 62.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 110V

Continuous drain current: 30.4A

Input Capacitance (Ciss): 2600pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 25mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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