NXP PDTA115EE,115 Pre-Biased Bipolar Transistor
ManufacturerNXP(View more products from this manufacturer)
ModelPDTA115EE,115
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R1/R2: 1
Mounting Type: Surface Mount
Power-Maximum: 150mW
Transistor type: PNP-Prebias
Collector current: 20mA
DC electricity gain: 80@5mA@5V
Resistance-Base (R1): 100kOhms
Vce Saturation (maximum): 150mV@250uA,5mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 100kOhms
DC current gain (hFE) (minimum): 80@5mA,5V
Current-Collector (Ic) (maximum): 20mA
Current-Collector cutoff (maximum): 1uA
Voltage-Collector-emitter breakdown (maximum): 50V
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