NXP MW6S004NT1 RF Power MOSFET HV6 1950MHZ 2W PLD1.5N
ManufacturerNXP(View more products from this manufacturer)
ModelMW6S004NT1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Gain: 18 dB
Width: 5.97 mm
Height: 1.83 mm
Length: 6.73 mm
Technology: Si
Unit Weight: 280 mg
Channel Mode: Enhancement
Output Power: 4 W
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Moisture Sensitive: Yes
Operating Frequency: 1 MHz to 2 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 12 V
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 68 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts