NXP MRFX600HR5 RF Power MOSFET Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

Gain: 26.4 dB

Technology: Si

Unit Weight: 5.690 g

Output Power: 600 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 400 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.333 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 33.6 S

Vds - Drain-Source Breakdown Voltage: 179 V

Vgs th - Gate-Source Threshold Voltage: 2.9 V