NXP MRFE6VP61K25HR6 RF Power MOSFET VHV6 1.25KW ISM NI1230H

Gain: 24 dB

Technology: Si

Unit Weight: 13.155 g

Output Power: 1.25 kW

Configuration: Single

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 600 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.333 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 28 S

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V