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NXP MRFE6VP5600HSR5 RF Power MOSFET VHV6 600W 50V NI1230HS

ModelMRFE6VP5600HSR5
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Gain: 25 dB

Technology: Si

Unit Weight: 8.488 g

Output Power: 600 W

Configuration: Dual

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 600 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.667 kW

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 130 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V

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