NXP MRF8VP13350NR5 RF Power MOSFET RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V

Gain: 19.2 dB

Technology: Si

Unit Weight: 3.074 g

Output Power: 350 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 700 MHz to 1.3 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 1.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V