NXP MRF6V10010NR4 RF Power MOSFET VHV6 10W PULSE PLD1.5
ManufacturerNXP(View more products from this manufacturer)
ModelMRF6V10010NR4
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Gain: 25 dB
Width: 5.97 mm
Height: 1.83 mm
Length: 6.73 mm
Technology: Si
Unit Weight: 280 mg
Channel Mode: Enhancement
Output Power: 10 W
REACH - SVHC: Details
Configuration: Single Dual Source
Mounting Style: Screw Mount
Moisture Sensitive: Yes
Operating Frequency: 960 MHz to 1.4 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 1.7 V
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