NXP MRF1K50NR5 RF Power MOSFET Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

Gain: 23 dB

Technology: Si

Unit Weight: 5.281 g

Output Power: 1.5 kW

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 500 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.941 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 33.5 S

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V