NXP MMRF1310HR5 RF Power MOSFET Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

Gain: 28 dB

Technology: Si

Unit Weight: 6.396 g

Output Power: 300 W

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 600 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.05 kW

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V