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Gain: 27 dB
Technology: Si
Unit Weight: 4.570 g
Output Power: 100 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 2 GHz
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 133 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
