Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 19 dB
Technology: Si
Unit Weight: 280 mg
Output Power: 4 W
REACH - SVHC: Details
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 1 MHz to 2 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 68 V
Vgs th - Gate-Source Threshold Voltage: 2 V
