NXP MMRF1014NT1 RF Power MOSFET LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
ManufacturerNXP(View more products from this manufacturer)
ModelMMRF1014NT1
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Gain: 19 dB
Technology: Si
Unit Weight: 280 mg
Output Power: 4 W
REACH - SVHC: Details
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 1 MHz to 2 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 68 V
Vgs th - Gate-Source Threshold Voltage: 2 V
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