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Gain: 20 dB
Technology: Si
Unit Weight: 8.544 g
Output Power: 1 kW
Mounting Style: Screw Mount
Number of Channels: 2 Channel
Operating Frequency: 900 MHz to 1.215 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 110 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
