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NXP MHT2012NT1 Power Amplifiers RF LDMOS Integrated Power Amplifier, 2450 MHz, 12.5 W CW, 28 V

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Gain: 29.7 dB

Technology: Si

Mounting Style: SMD/SMT

Test Frequency: 2.45 GHz

Number of Channels: 2 Channel

Operating Frequency: 2.4 GHz to 2.5 GHz

Operating Supply Current: 75 mA

Operating Supply Voltage: 28 V

P1dB - Compression Point: 42.3 dBm

OIP3 - Third Order Intercept: 43 dBm

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

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