NXP LTE3401HX Low Noise Amplifiers SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

Gain: 19.5 dB

Technology: SiGe

Unit Weight: 0.737 mg

Isolation dB: 30 dB

Mounting Style: SMD/SMT

Test Frequency: 2.14 GHz

Input Return Loss: 12 dB

NF - Noise Figure: 0.65 dB

Number of Channels: 1 Channel

Operating Frequency: 1.452 GHz to 2.69 GHz

Supply Voltage - Max: 3.1 V

Supply Voltage - Min: 1.5 V

Operating Supply Current: 13.4 mA

Operating Supply Voltage: 1.5 V to 3.1 V

P1dB - Compression Point: - 10.5 dBm

OIP3 - Third Order Intercept: 2 dBm

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C