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NXP BUK9E04-30B,127 MOSFET

ModelBUK9E04-30B,127
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Vgs(th): 2 V

Vgs (Max): 15V

Gate Charge (Qg): 56nC

Power consumption: 254W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 75A

Input Capacitance (Ciss): 6526pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet


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