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NXP BUK961R7-40E,118 MOSFET

ModelBUK961R7-40E,118
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Vgs(th): 2.1 V

Vgs (Max): 10V

Gate Charge (Qg): 105.4nC

Power consumption: 324W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 120A

Input Capacitance (Ciss): 15010pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 5|10V

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