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Technology: SiGe
Unit Weight: 6.665 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Wideband
Operating Frequency: 25 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 234 mW
Emitter- Base Voltage VEBO: 1 V
Continuous Collector Current: 50 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 235
Collector- Emitter Voltage VCEO Max: 2.8 V
