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Technology: Si
Unit Weight: 5.531 mg
Output Power: 7 dBm
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: Bipolar Wideband
Operating Frequency: 10 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 450 mW
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 10 GHz
Emitter- Base Voltage VEBO: 2 V
Operating Temperature Range: - 40 C to + 150 C
Collector- Base Voltage VCBO: 24 V
Continuous Collector Current: 30 mA
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 12 V
