NXP AFV121KHR5 RF Power MOSFET Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V

Gain: 16.9 dB

Technology: Si

Unit Weight: 13.193 g

Output Power: 1.23 kW

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 960 MHz to 1.215 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 112 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V