NXP AFV10700GSR5 RF Power MOSFET Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

Gain: 19.2 dB

Technology: Si

Output Power: 700 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.03 GHz to 1.09 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 526 W

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V