NXP AFV09P350-04NR3 RF Power MOSFET 720-960 MHz 100 W AVG. 48 V

Gain: 19.2 dB

Technology: Si

Unit Weight: 3.065 g

Output Power: 100 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 720 MHz to 960 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V