NXP AFT27S012NT1 RF Power MOSFET Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V

Gain: 20.9 dB

Technology: Si

Unit Weight: 280 mg

Output Power: 1.26 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 728 MH to 2700 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 154 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V