NXP AFT09MP055GNR1 RF Power MOSFET MV9 55W 12.5V TO270WB4G

Gain: 17.5 dB

Technology: Si

Unit Weight: 1.635 g

Output Power: 57 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 764 MHz to 940 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 7 S

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V