NXP A5G35S004NT6 RF Power MOSFET Airfast RF Power GaN Transistor, 3300-4300 MHz, 24.5 dBm Avg., 48 V

Gain: 24.5 dB

Technology: GaN-on-Si

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Vgs - Gate-Source Voltage: - 16 V

Maximum Operating Frequency: 4.3 GHz

Minimum Operating Frequency: 3.3 GHz

Id - Continuous Drain Current: 12 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 2.5 V