NXP A5G35H120NT2 RF Power MOSFET Airfast RF Power GaN Amplifier, 3300-3800 MHz, 18 W Avg., 48 V
ManufacturerNXP(View more products from this manufacturer)
ModelA5G35H120NT2
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Technology: GaN-on-Si
Output Power: 18 W
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Vgs - Gate-Source Voltage: - 16 V
Maximum Operating Frequency: 3.8 GHz
Minimum Operating Frequency: 3.3 GHz
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 2.4 V
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