NXP A5G35H110NT4 RF Power MOSFET Airfast RF Power GaN Amplifier, 3300-3700 MHz, 15.1 W Avg., 48 V
ManufacturerNXP(View more products from this manufacturer)
ModelA5G35H110NT4
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Technology: GaN-on-Si
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Vgs - Gate-Source Voltage: - 16 V
Id - Continuous Drain Current: 8.7 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
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