NXP A5G21H605W19NR3 GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
ManufacturerNXP(View more products from this manufacturer)
ModelA5G21H605W19NR3
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Technology: GaN-on-Si
Output Power: 85 W
Mounting Style: SMD/SMT
Moisture Sensitive: Yes
Maximum Operating Frequency: 2.2 GHz
Minimum Operating Frequency: 2.11 GHz
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 125 V
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