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NXP A5G19H605W19NR3 GaN FETs Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V

ModelA5G19H605W19NR3
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Technology: GaN-on-Si

Output Power: 85 W

Moisture Sensitive: Yes

Maximum Operating Frequency: 1.995 GHz

Minimum Operating Frequency: 1.93 GHz

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