NXP A5G08H800W19NR3 GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V

Technology: GaN-on-Si

Output Power: 112 W

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Maximum Operating Frequency: 960 MHz

Minimum Operating Frequency: 865 MHz

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V