NXP A3V07H600-42NR6 RF Power MOSFET Airfast RF Power LDMOS Transistor, 616-870 MHz, 112 W Avg., 48 V

Gain: 16.9 dB

Technology: Si

Channel Mode: Enhancement

Output Power: 112 W

Configuration: Triple

Transistor Type: 3 N-Channel

Moisture Sensitive: Yes

Number of Channels: 3 Channel

Operating Frequency: 616 MHz to 870 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 6 VDC, 10 VDC

Maximum Operating Temperature: + 225 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.5 VDC