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NXP A3T21H456W23SR6 RF Power MOSFET RF PWR LDMOS TRNSTR 2110-2200 MHz 87W30V

ModelA3T21H456W23SR6
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Gain: 15.5 dB

Technology: Si

Output Power: 87 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 2.11 GHz to 2.2 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

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