NXP A3G26D055NT4 RF Power MOSFET Airfast RF Power GaN Amplifier, 100-2690 MHz, 8 W Avg., 48 V

Technology: GaN-on-Si

Output Power: 8 W

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Maximum Operating Frequency: 2.69 GHz

Minimum Operating Frequency: 100 MHz

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 2.7 V