NXP A2V09H300-04NR3 RF Power MOSFET Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V

Gain: 19.7 dB

Technology: Si

Unit Weight: 3.097 g

Output Power: 79 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 720 MHz to 960 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 1.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V