NXP A2T27S020NR1 RF Power MOSFET Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V

Gain: 21.1 dB

Technology: Si

Unit Weight: 532.200 mg

Output Power: 2.5 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 400 MHz to 2.7 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V