NXP A2T21H100-25SR3 RF Power MOSFET Airfast RF Power LDMOS Transistor 2110-2170 MHz, 18 W Avg., 28 V

Gain: 17.4 dB

Technology: Si

Unit Weight: 4.672 g

Output Power: 18 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 2.11 GHz to 2.17 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V