NXP A2T09VD250NR1 RF Power MOSFET Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V

Gain: 22.4 dB

Technology: Si

Unit Weight: 1.589 g

Output Power: 65 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 716 MHz to 960 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V