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Gain: 18 dB
Technology: Si
Unit Weight: 6.440 g
Output Power: 330 W
Configuration: Single
Mounting Style: SMD/SMT
Operating Frequency: 1.2 GHz to 1.4 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
