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NXP MMRF1015NR1 RF Power MOSFET Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V

ModelMMRF1015NR1
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Gain: 18 dB

Technology: Si

Unit Weight: 529.550 mg

Output Power: 10 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Operating Frequency: 1 MHz to 1 GHz

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 68 V

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