NXP AFT05MS031GNR1 RF Power MOSFET MV9 UHF 13.6V

Gain: 17.7 dB

Technology: Si

Unit Weight: 550 mg

Output Power: 33 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 136 MHz to 520 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 294 W

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V